Low-Temperature Chemical Ashing System
ICE series

Low-Temperature Ashing System Applicable to Thin Wafers

This ashing system supports HDIS (High-dose implant strip) and processes 200 mm wafers and 300 mm wafers. Its source / bias discharge system achieves high-speed ashing. In addition, the electrostatic chuck equipped with a cooling mechanism can keep the wafer at a low temperature, allowing it to be used as a popping countermeasure, for ashing of ultra-thin wafers with protective materials, and for ashing and light ashing while suppressing metal oxidation. This system provides a solution to the problems relating to the thin wafer ashing process and, therefore, contributes to the improvement of productivity.

Etching, Cleaning, Chip bonding.
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Features

High-speed / Low-Temperature Ashing

Maintains wafer temperatures at 100℃ or lower while achieving the ashing rate of 1.5μm / min or more. It achieved both removal of resist residue and popping countermeasure.

Supports High Concentration HDI

Capable of ashing for HDI wafers of 1015 [atm / cm2] without leaving any residue.

Supports Thin Wafers

Capable of processing thin wafers with protective material through the low-temperature processing by the cooling feature.

Wafer Processing in Progress
Entire chamber illuminated plasma arc
Upper Plasma Electrode
Applying the unique plasma electrode structure

Contact Us

The Division in Charge of This Product
  • Fine Mechatronics Division