Low-Temperature Chemical Ashing System
ICE series
Low-Temperature Ashing System Applicable to Thin Wafers
This ashing system supports HDIS (High-dose implant strip) and processes 200 mm wafers and 300 mm wafers. Its source / bias discharge system achieves high-speed ashing. In addition, the electrostatic chuck equipped with a cooling mechanism can keep the wafer at a low temperature, allowing it to be used as a popping countermeasure, for ashing of ultra-thin wafers with protective materials, and for ashing and light ashing while suppressing metal oxidation. This system provides a solution to the problems relating to the thin wafer ashing process and, therefore, contributes to the improvement of productivity.
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Features
High-speed / Low-Temperature Ashing
Maintains wafer temperatures at 100℃ or lower while achieving the ashing rate of 1.5μm / min or more. It achieved both removal of resist residue and popping countermeasure.
Supports High Concentration HDI
Capable of ashing for HDI wafers of 1015 [atm / cm2] without leaving any residue.
Supports Thin Wafers
Capable of processing thin wafers with protective material through the low-temperature processing by the cooling feature.


Related Information
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- Fine Mechatronics Division