Hot- H₃PO₄ Wet Etching System
SC300-HT series

Largest Share (Based on the Survey Conducted by Shibaura Mechatronics) among the Single-Wafer Nitride Film Etching Processes
This Hot- H₃PO₄ Wet Etching System Supports 300mm Wafers

This Hot- H₃PO₄ wet etching system is continuously evolving as a nitride film etching system for cutting-edge logic devices.
Its features include etching profile control by the wafer proximity heater, high selectivity by silicon concentration control, and 2-in-1 configuration by the integration with a post-cleaning process. This contributes to the improvement of device reliability and yield.

Features

Etching, Cleaning, Chip bonding.
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Semiconductor Manufacturing
Solutions

Largest Share in the Etching Single-Wafer Nitride Films

Features

Control of Etching Profile

Capable of control of the amount of etching from the center to the end of a wafer with the zone-controlled wafer proximity heater, thereby minimizing the groundwork loss.

Achieved Both a High Etching Rate and a High Selection Ratio

Achieved a high selection ratio by controlling the silicon concentration in the phosphoric acid while maintaining the temperature of phosphoric acid at 160℃ or higher.

2-in-1 Concept

The phosphoric acid process and post-cleaning process are integrated into one system. A drying technology to counter pattern collapse can also be installed.