Photomask Etching System
ARES™ series
Photomask Etching System Applicable to EUV Masks
This ARES™ series Photomask Etching System supports wide range products from next-generation EUV photomasks to legacy products. By combining process modules equipped with our specific plasma source according to the application, this responds to the requirements ranging from cutting-edge development evaluation to mass production.
The new ARES™ for next generation EUV of NA0.55 realizes a wider process window through the application of the new chamber structure and the material optimization. We will continuously respond to ever diversifying photomask material properties and processes to suit the customer requirements.
We introduce products according to your specific needs!
Features
Supports Large Displacement and Ultra-Low Pressure Process
Achieved the highest exhaust speed in the industry by optimizing the chamber structure.
Its high in-plane uniformity was also achieved by combining our unique plasma source.
Supports Low Particles
Contributes to a particle-free feature by optimizing materials including chamber and coating materials.
Developed an Endpoint Monitor
Capable of endpoint detection even for a mask of low exposed area ratio of 1% or less.
Related Information
Contact Us
- Fine Mechatronics Division