Low Temperature Chemical
Ashing Equipment
ICE
Low-temperature ashing system applicable to thin wafers
This ashing system supports HDIS (High-dose implant strip) and processes 200 mm wafers and 300 mm wafers. Its source/bias discharge system achieves high speed ashing. The electrostatic chuck with a cooling feature can maintain wafer temperatures at a low level, supporting popping countermeasures and ashing of ultra thin wafers with protective material. This system provides a solution to the problems relating to the thin wafer ashing process and, therefore, contributes to the improvement of the productivity.
Features
- ・High-speed/low-temperature ashing
Maintains wafer temperatures at 100℃ or lower while achieving the ashing rate of 1.5μm/min. It achieved both removal of resist residue and popping countermeasure.
- ・Supports high concentration HDI
Capable of ashing for HDI wafers of 1015[atm/cm2]without leaving any residue.
- ・Supports thin wafers
Capable of processing thin wafers with protective material through the low-temperature processing by the cooling feature.
Wafer being processedEntire chamber illuminated plasma arc
Upper plasma electrodeApplying the unique plasma electrode structure