Chemical Dry Etching Equipment
CDE
Bringing The Endless Possibilities of CDE to the Unseen Aspects of Processing
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This isotropic etching system applicable to wafers of φ75 mm to 300 mm has been favoured by customers for many years. While having many achievements for round etching including Si and SiO2, recently this system has also been used for the improvement of device properties by using its remote plasma feature. Its plasma damage-free technology contributes to the designing of high-quality devices.
Features
- ・Isotropic etching
By generating plasma outside of the chamber and performing the etching processing with radical compounds only, this system is capable of perfect isotropic etching processing.
This system is applied for round processing for trench pattern opening sections. - ・Plasma damage-free feature
Due to the long distance from a plasma to a wafer, the ion generated within the plasma is deactivated and does not impact the wafer. This feature is applied to removal of damaged layers after RIE processing.
Wafer being processedThe surface of the wafer is illuminated with chemical luminescence
Plasma illuminationUnique remote plasma source
