High-temperature Phosphoric
Acid Etching System
SC300-HT series
Largest share (based on the survey conducted by Shibaura Mechatronics)
among the single-wafer nitride film etching processes.
This high-temperature phosphoric acid etching system supports 300mm wafers.
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This high-temperature phosphoric acid etching system is continuously evolving as a nitride film etching system for cutting-edge logic devices.
Its features include etching profile control by the wafer proximity heater, high selectivity by silicon concentration control, and 2-in-1 configuration by the integration with a post-cleaning process. This contributes to the improvement of device reliability and yield.
Features
- ・Control of etching profile
Capable of control of the amount of etching from the center to the end of a wafer with the zone-controlled wafer proximity heater, thereby minimizing the groundwork loss.
- ・Achieved both a high etching rate and a high selection ratio
Achieved a high selection ratio by controlling the silicon concentration in the phosphoric acid while maintaining the temperature of phosphoric acid at 160℃ or higher.
- ・2-in-1 concept
The phosphoric acid process and post-cleaning process are integrated into one system. A drying technology to counter pattern collapse can also be installed.
High-temperature phosphoric acid treatment processSingle-wafter wet etching system that treats phosphorus at the temperature exceeding 160℃
Inline heaterContributes to the stabilization of the temperature of phosphoric acid with the high-precision heater
