ICELow Temperature Chemical Ashing Equipment

This ashing system supports HDIS (High-dose implant strip) and processes 200 mm wafers and 300 mm wafers. Its source/bias discharge system achieves high speed ashing. The electrostatic chuck with a cooling feature can maintain wafer temperatures at a low level, supporting popping countermeasures and ashing of ultra thin wafers with protective material. This system provides a solution to the problems relating to the thin wafer ashing process and, therefore, contributes to the improvement of the productivity.

Features

• ・High-speed/low-temperature ashing

  Maintains wafer temperatures at 100℃ or lower while achieving the ashing rate of 1.5μm/min. It achieved both removal of resist residue and popping countermeasure.

• ・Supports high concentration HDI

  Capable of ashing for HDI wafers of 10¹⁵[atm/cm²]without leaving any residue.

• ・Supports thin wafers

  Capable of processing thin wafers with protective material through the low-temperature processing by the cooling feature.

Wafer being processedEntire chamber illuminated plasma arc

Upper plasma electrodeApplying the unique plasma electrode structure