Contact UsThis ARES Series photomask etching system supports products ranging from next-generation EUV photomasks to legacy products. By combining process modules equipped with our specific plasma source according to the application, this responds to the requirements ranging from cutting-edge development evaluation to mass production.
The new ARES for next generation EUV of NA0.55 realizes a wider process window through the application of the new chamber structure and the material optimization. We will continuously respond to ever diversifying photomask material properties and processes to suit the customer requirements.
Features
- ・Supports large displacement and ultra-low pressure process
Achieved the highest exhaust speed in the industry by optimizing the chamber structure.
Its high in-plane uniformity was also achieved by combining our unique plasma source. - ・Supports low particles
Contributes to a particle-free feature by optimizing materials including chamber and coating materials.
- ・Developed an endpoint monitor
Capable of endpoint detection even for a mask of low exposed area ratio of 1% or less.
Photomask being processed
No sheath formation in plasma
Photomask being processed
Sheath formation in plasma(During anisotropic etching)
