Chemical Dry Etching Equipment

Chemical Dry Etching Equipment (CDE)

Chemical Dry Etching Equipment

CDE series provides purely chemical dry etching applications free from plasma damage. The plasma ignition point and wafer stage is isolated (complete remote plasma).

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Features

  • Microwave isotropic chemical etching
  • Free from plasma-damage
  • Wafer temperature control with E-chuck function
  • Wafer size: 3~8 inches
  • Double-finger vacuum robot

Equipment specifications

Etching method Microwave isotropic etching
Etching material Poly Si, SiN, BPSG, W, Mo, SiC, Ta, SiGe etc.
Wafer size 3~8 inches
Etching chamber Single-wafer etching
Vacuum pump Dry pump
Pressure control APC
Etching gas CF4 ,O2 ,CH2F2 ,CI2 etc
Plasma power supply Microwave 2.45GHz, 1.0kW

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