High speed/Low damage etching system
- High-speed/low charging damage etching by high density/low energy plasma source
- Low pressure process
- High productivity rate of 160 wafers/h
- Double process chamber
- Many functions (series etching/parallel etching)
- Applicable to 300mm wafers (option)
| Material | Low-k resist Organic polymer low-k Hi-Dose ion implanted resist Via hole resist |
|---|---|
| Wafer size | 200mm (300mm) |
| Method |
Downstream with bias RF |
| Process chambers |
Two chambers |
| Discharge | Microwave 2.45GHz 3kW Bias: RF 13.56MHz 500W |
| Transfer mechanism |
Mechanical transfer |
| Wafer temperature |
5-70°C |
| Pressure controls | APC (Throttle valve) × 2 |
| Vacuum pumps | Turbo molecular pump × 2 Dry pump × 3 |
| Gases | O2 ,N2 ,CF4 ,H2 ,NH3 |
|---|---|
| Etching rate | Resist 2.5µm/min (25°C) |
| Uniformity | ≤ ±5% |
| Metal contamination | ≤ 5-1010 Atoms/cm2 |
| Particles | ≤ 20pcs/wafer (≥ 0.2µm) |
| Throughput | ≤ 160wafers/h |
| Tact time | ≤ 20sec/wafer |
